Full-time

Principal Medium Voltage Power MOSFET Design Engineer

Posted by Renesas • June 03, 2026

📍 Takasaki, Japan, Japan
Apply Now

Description

Principal Medium Voltage Power MOSFET Design Engineer

Job Description

**Job Summary:**
We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Design Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with process integration team, application team , marketing team and external foundry partners to drive innovation, optimize performance, and accelerate product industrialization.

**Key Responsibilities:**

+ Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology
+ Develop TCAD simulation decks and propose advanced device design concepts
+ Analyze wafer-level electrical test results and package-level performance data for each development iteration
+ Lead yield improvement activities and support technology tran...

Ready to Seal the Deal?

Submit your application today and take the next step in your career with Renesas.

Apply for this Job